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wafer

grown by MOCVD epitaxy on InP substrate. Provide FP and DFB epitaxial wafers with center wavelengths from 1250nm to 1650nm.
  • features:

     

    center wavelength from 1250 to 1650nm

    thickness error is controlled within 5%

    doping concentration 1e17 to 1 e19, the error is controlled within 20%

    Material Defects Low 50cm-2(D>10um)

     

     

    application:

    emitting laser

    PD

    high power laser